Positronics of radiation-induced effects in chalcogenide glassy semiconductors

Using As 2 S 3 and AsS 2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-03, Vol.49 (3), p.298-304
Main Authors: Shpotyuk, O., Kozyukhin, S. A., Shpotyuk, M., Ingram, A., Szatanik, R.
Format: Article
Language:English
Subjects:
ABSORPTION
ABSORPTION SPECTROSCOPY
AGING
ANNIHILATION
ARSENIC SULFIDES
CRYSTAL DEFECTS
DOPPLER BROADENING
GAMMA SPECTROSCOPY
GLASS
Interaction with Radiation
LIFETIME
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
POSITRONS
SEMICONDUCTOR MATERIALS
Spectroscopy
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Summary:Using As 2 S 3 and AsS 2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of the positron annihilation lifetime and Doppler broadening of the annihilation line in reverse chronological order are in full agreement with the optical spectroscopy data in the region of the fundamental absorption edge, being adequately described within coordination defect-formation and physical-aging models.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615030197