Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n -InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illu...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-02, Vol.49 (2), p.181-186
Main Authors: Arapov, Yu. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., Yakunin, M. V.
Format: Article
Language:English
Subjects:
2014
Analysis
ELECTRIC CONDUCTIVITY
Electron transport
ELECTRON-ELECTRON COUPLING
Electron-electron interactions
GALLIUM ARSENIDES
HALL EFFECT
HETEROJUNCTIONS
HYPOTHESIS
ILLUMINANCE
INDIUM ARSENIDES
INFRARED RADIATION
MAGNETIC FIELDS
Magnetic Materials
Magnetism
March 10–14
MATERIALS SCIENCE
N-TYPE CONDUCTORS
NANOSCIENCE AND NANOTECHNOLOGY
Nizhni Novgorod
Physics
Physics and Astronomy
QUANTUM WELLS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
XVIII Symposium “Nanophysics and Nanoelectronics”
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Summary:The dependences of the longitudinal and Hall resistances on a magnetic field in the integer quantum Hall effect regime in n -InGaAs/GaAs heterostructures with a double quantum well are measured in the range of magnetic fields B = 0–16 T and temperatures T = 0.05–4.2 K, before and after infrared illumination. Analysis of the temperature dependence of the width of transitions between plateaus of the quantum Hall effect is performed in the scope of the scaling hypothesis allowing for electron-electron interaction effects.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615020037