Structural, optical, and current investigations of superlattices with a complex AlGaAs-based unit cell

The results of complex analysis of the parameters of the GaAs/AlGaAs semiconductor superlattice with a complex unit cell using mathematical modeling and experimental methods of transmission electron microscopy, energy-dispersive analysis, and spectroscopy of photoluminescence and photocurrent are pr...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-01, Vol.49 (1), p.118-123
Main Authors: Romanova, Yu. Yu, Dodin, E. P., Nozdrin, Yu. N., Biryukov, A. A., Baidus, N. V., Pavlov, D. A., Malekhonova, N. V.
Format: Article
Language:English
Subjects:
2014
ALUMINIUM ARSENIDES
Analysis
DISPERSIONS
Electric properties
ELECTRONS
EMISSION SPECTROSCOPY
GALLIUM ARSENIDES
Magnetic Materials
Magnetism
March 10–14
MATERIALS SCIENCE
MATHEMATICAL MODELS
Nizhni Novgorod
PHOTOCURRENTS
PHOTOLUMINESCENCE
Physics
Physics and Astronomy
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
Semiconductors
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY
XVIII Symposium “Nanophysics and Nanoelectronics”
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Summary:The results of complex analysis of the parameters of the GaAs/AlGaAs semiconductor superlattice with a complex unit cell using mathematical modeling and experimental methods of transmission electron microscopy, energy-dispersive analysis, and spectroscopy of photoluminescence and photocurrent are presented. Suppression of the intraband static negative differential conductivity under strong interaction conditions between minibands and the inharmonic electron-dispersion law is shown.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615010236