Transport of charge carriers through the thin base of a heterobipolar transistor under the impact of radiation

The transport of electrons in heterobipolar transistors with radiation defects is studied under conditions where the characteristic sizes of defect clusters and the distances between them can be comparable or can even exceed the sizes of the device base. It is shown that, under some levels of irradi...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-01, Vol.49 (1), p.69-74
Main Authors: Puzanov, A. S., Obolenskii, S. V., Kozlov, V. A.
Format: Article
Language:English
Subjects:
2014
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
ELECTRIC CONDUCTIVITY
ELECTRONS
IRRADIATION
Magnetic Materials
Magnetism
March 10–14
MATERIALS SCIENCE
NEUTRON FLUENCE
NEUTRONS
Nizhni Novgorod
Physics
Physics and Astronomy
Radiation
RADIATION EFFECTS
Semiconductors
TIME-OF-FLIGHT METHOD
TRANSISTORS
XVIII Symposium “Nanophysics and Nanoelectronics”
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Summary:The transport of electrons in heterobipolar transistors with radiation defects is studied under conditions where the characteristic sizes of defect clusters and the distances between them can be comparable or can even exceed the sizes of the device base. It is shown that, under some levels of irradiation, neutron radiation can bring about a decrease in the time of flight of hot electrons through the base, which retards the degradation of the transistor parameters.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615010224