Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs x P 1 − x layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-01, Vol.49 (1), p.1-3
Main Authors: Pavlov, D. A., Bidus, N. V., Bobrov, A. I., Vikhrova, O. V., Volkova, E. I., Zvonkov, B. N., Malekhonova, N. V., Sorokin, D. S.
Format: Article
Language:English
Subjects:
2014
Analysis
Arsenic compounds
ELASTICITY
Gallium arsenide
GALLIUM ARSENIDES
IMPURITIES
INDIUM
INDIUM ARSENIDES
LAYERS
Magnetic Materials
Magnetism
March 10–14
MATERIALS SCIENCE
MATRIX MATERIALS
NANOSCIENCE AND NANOTECHNOLOGY
Nizhni Novgorod
PHASE STUDIES
PHOSPHORUS
Physics
Physics and Astronomy
QUANTUM DOTS
Solid solutions
STRAINS
XVIII Symposium “Nanophysics and Nanoelectronics”
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Summary:The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs x P 1 − x layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615010182