Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”

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Bibliographic Details
Published in:Crystallography reports 2015-05, Vol.60 (3), p.449-449
Main Authors: Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu, Trunkin, I. N.
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Crystallography and Scattering Methods
ELECTRICAL PROPERTIES
Erratum
ERRORS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
Physics
Physics and Astronomy
QUANTUM WELLS
SUBSTRATES
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ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774515030128