Modulation of spin transfer torque amplitude in double barrier magnetic tunnel junctions

Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra deg...

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Bibliographic Details
Published in:Applied physics letters 2015-09, Vol.107 (10)
Main Authors: Clément, P.-Y., Baraduc, C., Ducruet, C., Vila, L., Chshiev, M., Diény, B.
Format: Article
Language:English
Subjects:
ALIGNMENT
AMPLITUDES
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Computer memory
DEGREES OF FREEDOM
DESIGN
EFFICIENCY
ELECTRODES
MAGNETIZATION
MODULATION
Physics
Polarizers
Random access memory
RANDOMNESS
SPIN
SPIN ORIENTATION
TORQUE
TUNNEL EFFECT
Tunnel junctions
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Summary:Magnetization switching induced by spin transfer torque is used to write magnetic memories (Magnetic Random Access Memory, MRAM) but can be detrimental to the reading process. It would be quite convenient therefore to modulate the efficiency of spin transfer torque. A solution is adding an extra degree of freedom by using double barrier magnetic tunnel junctions with two spin-polarizers, with controllable relative magnetic alignment. We demonstrate, for these structures, that the amplitude of in-plane spin transfer torque on the middle free layer can be efficiently tuned via the magnetic configuration of the electrodes. Using the proposed design could thus pave the way towards more reliable read/write schemes for MRAM. Moreover, our results suggest an intriguing effect associated with the out-of-plane (field-like) spin transfer torque, which has to be further investigated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4930578