A triple quantum dot based nano-electromechanical memory device

Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple...

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Bibliographic Details
Published in:Applied physics letters 2015-09, Vol.107 (11)
Main Authors: Pozner, R., Lifshitz, E., Peskin, U.
Format: Article
Language:English
Subjects:
Applied physics
Bias
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Colloid chemistry
Electromechanical devices
Floating structures
LIGANDS
MEMORY DEVICES
NANOSCIENCE AND NANOTECHNOLOGY
Organic chemistry
QUANTUM DOTS
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Summary:Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4930826