Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, wa...

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Bibliographic Details
Published in:Applied physics letters 2015-06, Vol.106 (25)
Main Authors: Ohno, Yutaka, Inoue, Kaihei, Fujiwara, Kozo, Deura, Momoko, Kutsukake, Kentaro, Yonenaga, Ichiro, Shimizu, Yasuo, Inoue, Koji, Ebisawa, Naoki, Nagai, Yasuyoshi
Format: Article
Language:English
Subjects:
Applied physics
Atomic properties
ATOMS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CRYSTAL GROWTH
CRYSTALS
DENSITY
Dislocation density
EDGE DISLOCATIONS
GETTERING
OXYGEN
Oxygen atoms
PRESSURE RANGE GIGA PA
SILICON
STRAINS
STRESSES
Tilt boundaries
TOMOGRAPHY
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4921742