Optical properties of individual site-controlled Ge quantum dots

We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much n...

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Published in:Applied physics letters 2015-06, Vol.106 (25)
Main Authors: Grydlik, Martyna, Brehm, Moritz, Tayagaki, Takeshi, Langer, Gregor, Schmidt, Oliver G., Schäffler, Friedrich
Format: Article
Language:English
Subjects:
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Epitaxial growth
EPITAXY
EXCITATION
GERMANIUM SILICIDES
LAYERS
LINE WIDTHS
MEV RANGE 10-100
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POTENTIALS
QUANTUM DOTS
SIGNALS
Silicon germanides
Silicon substrates
SUBSTRATES
TRAPS
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cited_by cdi_FETCH-LOGICAL-c386t-4e6c1c4bba3adb15bca5ed94ce74d23e63e49b8584aaa0bb1df9f39e12fc548c3
cites cdi_FETCH-LOGICAL-c386t-4e6c1c4bba3adb15bca5ed94ce74d23e63e49b8584aaa0bb1df9f39e12fc548c3
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container_issue 25
container_start_page
container_title Applied physics letters
container_volume 106
creator Grydlik, Martyna
Brehm, Moritz
Tayagaki, Takeshi
Langer, Gregor
Schmidt, Oliver G.
Schäffler, Friedrich
description We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.
doi_str_mv 10.1063/1.4923188
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subjects Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Epitaxial growth
EPITAXY
EXCITATION
GERMANIUM SILICIDES
LAYERS
LINE WIDTHS
MEV RANGE 10-100
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
POTENTIALS
QUANTUM DOTS
SIGNALS
Silicon germanides
Silicon substrates
SUBSTRATES
TRAPS
title Optical properties of individual site-controlled Ge quantum dots
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