Oxidation of ultrathin GaSe

Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating...

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Bibliographic Details
Published in:Applied physics letters 2015-10, Vol.107 (17)
Main Authors: Beechem, Thomas E., Brumbach, Michael T., McDonald, Anthony E., Howell, Stephen W., Ohta, Taisuke, Kowalski, Brian M., Pask, Jesse A., Kalugin, Nikolai G., Spataru, Catalin D.
Format: Article
Language:English
Subjects:
BY-PRODUCTS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
GALLIUM SELENIDES
LASERS
MATERIALS SCIENCE
OXIDATION
PHOTOLUMINESCENCE
TWO-DIMENSIONAL SYSTEMS
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:Oxidation of exfoliated gallium selenide (GaSe) is investigated through Raman, photoluminescence, Auger, and X-ray photoelectron spectroscopies. Photoluminescence and Raman intensity reductions associated with spectral features of GaSe are shown to coincide with the emergence of signatures emanating from the by-products of the oxidation reaction, namely, Ga{sub 2}Se{sub 3} and amorphous Se. Photoinduced oxidation is initiated over a portion of a flake highlighting the potential for laser based patterning of two-dimensional heterostructures via selective oxidation.
ISSN:0003-6951
1077-3118