High performance CaS solar-blind ultraviolet photodiodes fabricated by seed-layer-assisted growth

CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (18)
Main Authors: He, Qing Lin, Lai, Ying Hoi, Liu, Yi, Beltjens, Emeline, Qi, Jie, Sou, Iam Keong
Format: Article
Language:English
Subjects:
Applied physics
CALCIUM SULFIDES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Epitaxial growth
EV RANGE 01-10
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTODIODES
QUANTUM EFFICIENCY
SUBSTRATES
THIN FILMS
ULTRAVIOLET RADIATION
ZINC SULFIDES
Zincblende
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Summary:CaS, with a direct bandgap of 5.38 eV, is expected to be a strong candidate as the active-layer of high performance solar-blind UV photodiodes that have important applications in both civilian and military sectors. Here, we report that a seed-layer-assisted growth approach via molecular beam epitaxy can result in high crystalline quality rocksalt CaS thin films on zincblende GaAs substrates. The Au/CaS/GaAs solar-blind photodiodes demonstrated , more than five orders in its visible rejection power, a photoresponse of 36.8 mA/w at zero bias and a corresponding quantum efficiency as high as 19% at 235 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4934944