Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc2O3/Y2O3/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt cry...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (20)
Main Authors: Lupina, L., Zoellner, M. H., Niermann, T., Dietrich, B., Capellini, G., Thapa, S. B., Haeberlen, M., Lehmann, M., Storck, P., Schroeder, T.
Format: Article
Language:English
Subjects:
Applied physics
Buffer layers
BUFFERS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
Crystal structure
Crystallinity
Epitaxial growth
EV RANGE 01-10
GALLIUM NITRIDES
Lattice matching
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PLASMA
RAMAN SPECTROSCOPY
SCANDIUM NITRIDES
SCANDIUM OXIDES
SILICON
Silicon substrates
SUBSTRATES
Thin films
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
Yttrium oxide
YTTRIUM OXIDES
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Summary:We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc2O3/Y2O3/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit 
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4935856