Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

Hot-carrier-induced linear drain current (Idlin) and threshold voltage (Vth) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (20)
Main Authors: Zhou, Xin, Qiao, Ming, He, Yitao, Li, Zhaoji, Zhang, Bo
Format: Article
Language:English
Subjects:
Applied physics
CARRIERS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Competition
Current carriers
CURRENTS
Degradation
Diffusion layers
Drift
ELECTRIC POTENTIAL
ELECTRON BEAM INJECTION
Gadolinium
HOLES
INSTABILITY
INTERFACES
LAYERS
Metal oxide semiconductors
METALS
MODULATION
Resistance
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SWITCHING CIRCUITS
THIN FILMS
Threshold voltage
Trapped charge
TRAPPING
TRAPS
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Summary:Hot-carrier-induced linear drain current (Idlin) and threshold voltage (Vth) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the Vth increasing and the channel conductance (Gch) decreasing, then reduces Idlin. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (Gd), and then increases Idlin. Consequently, the eventual Idlin degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured Idlin anomalously increases while the Vth is increasing with power law. The thin layer field pLDMOS exhibits more severe Vth instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4936161