Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoe...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (21)
Main Authors: Xu, Zhongguang, Zheng, Renjing, Khanaki, Alireza, Zuo, Zheng, Liu, Jianlin
Format: Article
Language:English
Subjects:
Applied physics
ATOMS
Boron nitride
BORON NITRIDES
Carbon
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COBALT
Crystal growth
Domains
Epitaxial growth
Flakes
GRAPHENE
Heterostructures
LAYERS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
Multilayers
Nuclei
PLASMA
SCANNING ELECTRON MICROSCOPY
SHAPE
Single crystals
SUBSTRATES
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4936378