Modeling and de-embedding the interferometric scanning microwave microscopy by means of dopant profile calibration

This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different boron-doping level areas is used to that end. The analysis of the experimentally obta...

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Bibliographic Details
Published in:Applied physics letters 2015-11, Vol.107 (22)
Main Authors: Michalas, L., Wang, F., Brillard, C., Chevalier, N., Hartmann, J. M., Marcelli, R., Theron, D.
Format: Article
Language:English
Subjects:
AMPLITUDES
Applied physics
BORON
CALIBRATION
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Dopants
Embedding
Engineering Sciences
Interferometry
Materials
Micro and nanotechnologies
Microelectronics
MICROSCOPY
MICROWAVE RADIATION
Modelling
Signal and Image processing
SIMULATION
Tips
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Summary:This paper presents the full modeling and a methodology for de-embedding the interferometric scanning microwave microscopy measurements by means of dopant profile calibration. A Si calibration sample with different boron-doping level areas is used to that end. The analysis of the experimentally obtained S11 amplitudes based on the proposed model confirms the validity of the methodology. As a specific finding, changes in the tip radius between new and used tips have been clearly identified, leading to values for the effective tip radius in the range of 45 nm to 85 nm, respectively. Experimental results are also discussed in terms of the effective area concept, taking into consideration details related to the nature of tip-to-sample interaction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4936761