How to decide between competing efficiency droop models for GaN-based light-emitting diodes

GaN-based light-emitting diodes (LEDs) exhibit a strong efficiency droop with higher current injection, which has been mainly attributed to Auger recombination and electron leakage, respectively. Thus far, the few reports on direct measurements of these two processes do not confirm their dominating...

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Bibliographic Details
Published in:Applied physics letters 2015-07, Vol.107 (3)
Main Author: Piprek, Joachim
Format: Article
Language:English
Subjects:
AMBIENT TEMPERATURE
Applied physics
Augers
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Computer simulation
COMPUTERIZED SIMULATION
Current injection
EFFICIENCY
GALLIUM NITRIDES
Leakage
LIGHT EMITTING DIODES
Mathematical models
Organic light emitting diodes
Parameter uncertainty
QUANTUM WELLS
RECOMBINATION
TEMPERATURE DEPENDENCE
Temperature effects
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Summary:GaN-based light-emitting diodes (LEDs) exhibit a strong efficiency droop with higher current injection, which has been mainly attributed to Auger recombination and electron leakage, respectively. Thus far, the few reports on direct measurements of these two processes do not confirm their dominating influence on the droop unambiguously. Advanced numerical simulations of experimental characteristics are shown to validate one or the other explanation by variation of uncertain material parameters. We finally demonstrate how the comparative simulation of temperature effects enables a clear distinction between both models. Contrary to common assumptions, the consistently measured efficiency reduction of blue LEDs with higher ambient temperature eliminates electron leakage as primary cause of the efficiency droop in these devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4927202