Coexistence of electric field controlled ferromagnetism and resistive switching for TiO{sub 2} film at room temperature

The Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device may be dominated by the modulation of Schottky-like barrier with th...

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Bibliographic Details
Published in:Applied physics letters 2015-08, Vol.107 (6)
Main Authors: Ren, Shaoqing, Qin, Hongwei, Bu, Jianpei, Zhu, Gengchang, Xie, Jihao, Hu, Jifan
Format: Article
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELECTRIC FIELDS
FERROMAGNETISM
MAGNETIZATION
OXYGEN
STRONTIUM TITANATES
TEMPERATURE RANGE 0273-0400 K
TITANIUM OXIDES
TRAPPING
VACANCIES
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Summary:The Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO{sub 2}/Nb:SrTiO{sub 3}. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO{sub 2}.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4928537