High temperature coefficient of resistance for a ferroelectric tunnel junction

An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the...

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Bibliographic Details
Published in:Applied physics letters 2015-08, Vol.107 (6)
Main Authors: Zhao, Xiaolin, Wang, Jianlu, Tian, Bobo, Liu, Bolu, Wang, Xudong, Huang, Hai, Zou, Yuhong, Sun, Shuo, Lin, Tie, Han, Li, Sun, Jinglan, Meng, Xiangjian, Chu, Junhao
Format: Article
Language:English
Subjects:
Applied physics
Bolometers
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Electron tunneling
FERROELECTRIC MATERIALS
Ferroelectricity
High temperature
Infrared detectors
INFRARED RADIATION
Pyroelectricity
SUPERCONDUCTING JUNCTIONS
TEMPERATURE RANGE 0273-0400 K
TUNNEL EFFECT
TUNNEL JUNCTIONS
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Summary:An infrared detector is proposed that is based on a ferroelectric tunnel junction (FTJ) working under bolometer-like principles. Electron tunneling, either direct or indirect, through the ferroelectric barrier depends on the temperature of the devices. During tunneling, infrared radiation alters the polarization of the ferroelectric film via pyroelectricity, resulting in a change in the barrier height of the tunnel junction. A high temperature coefficient of resistance of up to −3.86% was observed at room temperature. These results show that the FTJ structure has potential to be adapted for use in uncooled infrared detectors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4928540