Micromechanical measurement of beating patterns in the quantum oscillatory chemical potential of InGaAs quantum wells due to spin-orbit coupling

The quantum oscillatory magnetization M(B) and chemical potential μ(B) of a two-dimensional (2D) electron system provide important and complementary information about its ground state energy at low temperature T. We developed a technique that provides both quantities in the same cool-down process vi...

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Bibliographic Details
Published in:Applied physics letters 2015-08, Vol.107 (9)
Main Authors: Herzog, Florian, Heyn, Christian, Hardtdegen, Hilde, Schäpers, Thomas, Wilde, Marc A., Grundler, Dirk
Format: Article
Language:English
Subjects:
ACCURACY
Applied physics
Chemical potential
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
EXCITATION
GALLIUM ARSENIDES
GROUND STATES
Heterostructures
INDIUM ARSENIDES
INDIUM PHOSPHIDES
L-S COUPLING
MAGNETIZATION
MATERIALS
Organic chemistry
Parameter sensitivity
POTENTIALS
QUANTUM WELLS
SENSITIVITY
Sensitivity enhancement
Spin-orbit interactions
TWO-DIMENSIONAL SYSTEMS
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Summary:The quantum oscillatory magnetization M(B) and chemical potential μ(B) of a two-dimensional (2D) electron system provide important and complementary information about its ground state energy at low temperature T. We developed a technique that provides both quantities in the same cool-down process via a decoupled static operation and resonant excitation of a micromechanical cantilever. On InGaAs/InP heterostructures, we observed beating patterns in both M(B) and μ(B) attributed to spin-orbit interaction. A significantly enhanced sensitivity in μ enabled us to extract Rashba and Dresselhaus parameters with high accuracy. The technique is powerful for detailed investigations on the electronic properties of 2D materials.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4929840