Microwave-induced zero-resistance state in two-dimensional electron systems with unidirectional periodic modulation

In this study we fabricated lateral superlattices (LSLs) based on the selectively doped GaAs/AlAs heterostructures with a high-mobility two-dimensional (2D) electron gas. The LSLs were formed using the electron-beam lithography and lift-off techniques, which produced a set of metallic strips on top...

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Bibliographic Details
Published in:Applied physics letters 2016-01, Vol.108 (1)
Main Authors: Bykov, A. A., Strygin, I. S., Goran, A. V., Kalagin, A. K., Rodyakina, E. E., Latyshev, A. V.
Format: Article
Language:English
Subjects:
ALUMINIUM ARSENIDES
AMPLITUDES
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DOPED MATERIALS
ELECTRIC POTENTIAL
Electron beam lithography
ELECTRON BEAMS
ELECTRON GAS
Electron transport
ELECTRONS
GALLIUM ARSENIDES
GHZ RANGE 100-1000
HETEROJUNCTIONS
Heterostructures
MAGNETIC FIELDS
MICROWAVE RADIATION
Microwaves
MODULATION
PERIODICITY
Superlattices
TWO-DIMENSIONAL SYSTEMS
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Summary:In this study we fabricated lateral superlattices (LSLs) based on the selectively doped GaAs/AlAs heterostructures with a high-mobility two-dimensional (2D) electron gas. The LSLs were formed using the electron-beam lithography and lift-off techniques, which produced a set of metallic strips on top of a heterojunction. The amplitude of the 2D electron gas modulation in the LSL was controlled by the gate voltage applied to the metallic strips. The LSLs with two different periods (a = 200 nm and 500 nm) were used to investigate the influence of microwave radiation with the frequency of 110–150 GHz on the 2D electron transport at the temperature T = 1.6 K in the magnetic field B 
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4939453