Silicon junctionless field effect transistors as room temperature terahertz detectors

Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a sign...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2015-09, Vol.118 (10)
Main Authors: Marczewski, J., Knap, W., Tomaszewski, D., Zaborowski, M., Zagrajek, P.
Format: Article
Language:English
Subjects:
Circuits
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Field effect transistors
Low resistance
MOSFET
MOSFETs
NOISE
Open channels
OXIDES
Photolithography
RADIATION DETECTION
Room temperature
Semiconductor devices
SEMICONDUCTOR MATERIALS
SILICON
TEMPERATURE RANGE 0273-0400 K
Thermal noise
Transistors
VELOCITY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Terahertz (THz) radiation detection by junctionless metal-oxide-semiconductor field-effect transistors (JL MOSFETs) was studied and compared with THz detection using conventional MOSFETs. It has been shown that in contrast to the behavior of standard transistors, the junctionless devices have a significant responsivity also in the open channel (low resistance) state. The responsivity for a photolithographically defined JL FET was 70 V/W and the noise equivalent power 460 pW/√Hz. Working in the open channel state may be advantageous for THz wireless and imaging applications because of its low thermal noise and possible high operating speed or large bandwidth. It has been proven that the junctionless MOSFETs can also operate in a zero gate bias mode, which enables simplification of the THz array circuitry. Existing models of THz detection by MOSFETs were considered and it has been demonstrated that the process of detection by these junctionless devices cannot be explained within the framework of the commonly accepted models and therefore requires a new theoretical approach.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4929967