Studies on VO{sub x} thin films deposited over Si{sub 3}N{sub 4} coated Si substrates

Vanadium oxide (VO{sub x}) thin films were deposited on to the silicon nitride (Si{sub 3}N{sub 4}) coated silicon (Si) substrate using reactive direct current magnetron sputtering at different substrate temperatures (T{sub s}). The deposited films were characterized for their structural, morphologic...

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Bibliographic Details
Published in:AIP conference proceedings 2015-06, Vol.1665 (1)
Main Authors: Raj, P. Deepak, Sridharan, M., Gupta, Sudha
Format: Article
Language:English
Subjects:
ABSORPTION SPECTROSCOPY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIRECT CURRENT
ELECTRIC CONDUCTIVITY
ENERGY GAP
EV RANGE
GRAIN SIZE
SILICON
SILICON NITRIDES
SPUTTERING
STRAINS
SUBSTRATES
TEMPERATURE COEFFICIENT
TEMPERATURE DEPENDENCE
THIN FILMS
ULTRAVIOLET SPECTRA
VANADIUM OXIDES
VISIBLE SPECTRA
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Description
Summary:Vanadium oxide (VO{sub x}) thin films were deposited on to the silicon nitride (Si{sub 3}N{sub 4}) coated silicon (Si) substrate using reactive direct current magnetron sputtering at different substrate temperatures (T{sub s}). The deposited films were characterized for their structural, morphological, optical and electrical properties. The average grain size of the deposited films was in the range of 95 to 178 nm and the strain varied from 0.071 to 0.054 %. The optical bandgap values of the films were evaluated using UV-Vis spectroscopy and lies in the range of 2.46 to 3.88 eV. The temperature coefficient of resistance (TCR) for the film deposited at 125 °C was -1.23%/°C with the sheet resistivity of 2.7 Ω.cm.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4917911