Deposition of high permeability FeCoN films on mica substrates

In this study, sheet mica was explored as an alternative substrate for thin film deposition due to its unique layered structure and atomically flat surface. Static magnetic properties and microwave permeability of sputtered FeCoN films on mica with and without SiO2 under-layer were examined. In-plan...

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Bibliographic Details
Published in:Journal of applied physics 2015-07, Vol.118 (1), p.13902
Main Authors: Wu, Y. P., Yang, Yong, Yang, Z. H., Phouc, Nguyen N., Ma, Fusheng, Zong, B. Y., Ding, Jun
Format: Article
Language:English
Subjects:
ANISOTROPY
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COERCIVE FORCE
Coercivity
DEPOSITION
Flat surfaces
ISOTROPY
LAYERS
Magnetic films
Magnetic permeability
MAGNETIC PROPERTIES
MICA
MICROWAVE RADIATION
PERMEABILITY
Residual stress
RESIDUAL STRESSES
Silicon dioxide
SILICON OXIDES
Silicon substrates
Sputtered films
SPUTTERING
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
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Summary:In this study, sheet mica was explored as an alternative substrate for thin film deposition due to its unique layered structure and atomically flat surface. Static magnetic properties and microwave permeability of sputtered FeCoN films on mica with and without SiO2 under-layer were examined. In-plane isotropy and a large coercivity of 70 Oe were observed for the film directly deposited on mica substrate. With the insertion of 40 nm SiO2 under-layer between the film and mica substrate, well-defined in-plane anisotropy is formed due to the significant reduce in film residual stress, associated with a 3 Oe coercive force along easy axis. As a result, excellent microwave properties have been achieved and are comparable with the same film on Si substrate. Moreover, the permeability spectra are surprisingly stable from room temperature up to 390 K. Mica is proved as a promising substrate for magnetic films with high microwave performance, which is a great advantage for practical applications. Furthermore, our results provide an effective way to reduce the residual stress in sputtered films.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4923406