Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the prese...

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Bibliographic Details
Published in:Journal of applied physics 2015-07, Vol.118 (2)
Main Authors: Chandan, Greeshma, Mukundan, Shruti, Mohan, Lokesh, Roul, Basanta, Krupanidhi, S. B.
Format: Article
Language:English
Subjects:
Aluminum
Applied physics
Bias
Buffer layers
BUFFERS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
HETEROJUNCTIONS
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
NITRIDATION
PHOTOLUMINESCENCE
Silicon
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
Threading dislocations
TRAPS
X-RAY DIFFRACTION
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Summary:n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4926480