Multi-band terahertz active device with complementary metamaterial

We describe a multi-band terahertz-active device using a composite structure made of complementary metamaterial and doped silicon that can be dynamically controlled. This special complementary metamaterial exhibits three resonances that produce three pass-bands. The pass-bands can be uniformly manip...

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Bibliographic Details
Published in:Journal of applied physics 2015-09, Vol.118 (12)
Main Authors: Qiao, Shen, Zhang, Yaxin, Liang, Shixiong, Sun, Linlin, Sun, Han, Xu, Gaiqi, Zhao, Yuncheng, Yang, Ziqiang
Format: Article
Language:English
Subjects:
Applied physics
BEAMS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Composite structures
Computer simulation
COMPUTERIZED SIMULATION
CURRENTS
DEPTH
DISTRIBUTION
DOPED MATERIALS
FILTERS
Laser beams
LASERS
MAGNETIC FIELDS
Magnetic resonance
Metamaterials
MODULATION
Modulators
RESONANCE
SENSORS
SILICON
SPECTROSCOPY
SURFACES
SWITCHES
WAVELENGTHS
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Summary:We describe a multi-band terahertz-active device using a composite structure made of complementary metamaterial and doped silicon that can be dynamically controlled. This special complementary metamaterial exhibits three resonances that produce three pass-bands. The pass-bands can be uniformly manipulated by exploiting the photoinduced characteristics of the doped silicon. Simulations were performed to analyze the magnetic field and surface current distributions. The simulation results agree well with experimental results obtained from terahertz time-domain spectroscopy. Using an 808-nm-wavelength laser beam, a modulation depth of up to 80% was obtained. In numerical simulations, we used a conductivity mode to characterize photoinduction. The development of multi-band terahertz-active devices has many potential applications, for example, in filters, modulators, switches, and sensors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4931583