Band alignment and photon extraction studies of Na-doped MgZnO/Ga-doped ZnO heterojunction for light-emitter applications

Ultraviolet photoelectron spectroscopy is carried out to measure the energy discontinuity at the interface of p-type Na-doped MgZnO (NMZO)/n-type Ga-doped ZnO (GZO) heterojunction grown by dual ion beam sputtering. The offset values at valence band and conduction band of NMZO/GZO heterojunction are...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2015-10, Vol.118 (16)
Main Authors: Pandey, Sushil Kumar, Awasthi, Vishnu, Sengar, Brajendra Singh, Garg, Vivek, Sharma, Pankaj, Kumar, Shailendra, Mukherjee, C., Mukherjee, Shaibal
Format: Article
Language:English
Subjects:
Applied physics
ARGON IONS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Conduction bands
DOPED MATERIALS
Emitters
Energy measurement
Hall effect
HETEROJUNCTIONS
Ion beam sputtering
PHOTOELECTRON SPECTROSCOPY
PHOTONS
REFRACTIVE INDEX
Refractivity
SPUTTERING
THIN FILMS
ULTRAVIOLET RADIATION
Valence band
Zinc oxide
ZINC OXIDES
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ultraviolet photoelectron spectroscopy is carried out to measure the energy discontinuity at the interface of p-type Na-doped MgZnO (NMZO)/n-type Ga-doped ZnO (GZO) heterojunction grown by dual ion beam sputtering. The offset values at valence band and conduction band of NMZO/GZO heterojunction are calculated to be 1.93 and −2.36 eV, respectively. The p-type conduction in NMZO film has been confirmed by Hall measurement and band structure. Moreover, the effect of Ar+ ion sputtering on the valence band onset values of NMZO and GZO thin films has been investigated. This asymmetric waveguide structure formed by the lower refractive index of GZO than that of NMZO indicates that easy extraction of photons generated in GZO through the NMZO layer into free space. The asymmetric waveguide structure has potential applications to produce ZnO-based light emitters with high extraction efficiency.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4934560