Morphological analysis of GeTe in inline phase change switches

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A mon...

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Bibliographic Details
Published in:Journal of applied physics 2015-09, Vol.118 (9)
Main Authors: King, Matthew R., El-Hinnawy, Nabil, Salmon, Mike, Gu, Jitty, Wagner, Brian P., Jones, Evan B., Borodulin, Pavel, Howell, Robert S., Nichols, Doyle T., Young, Robert M.
Format: Article
Language:English
Subjects:
Amorphization
AMORPHOUS STATE
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALLIZATION
GERMANIUM TELLURIDES
PHASE CHANGE MATERIALS
Phase transitions
POLYCRYSTALS
PULSES
Scanning electron microscopy
Scanning transmission electron microscopy
SWITCHES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
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Summary:Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4929419