Influence of deposition temperature of thermal ALD deposited Al{sub 2}O{sub 3} films on silicon surface passivation

The effect of deposition temperature (T{sub dep}) and subsequent annealing time (t{sub anl}) of atomic layer deposited aluminum oxide (Al{sub 2}O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presenc...

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Bibliographic Details
Published in:AIP advances 2015-06, Vol.5 (6)
Main Authors: Batra, Neha, Panigrahi, Jagannath, Singh, Rajbir, Singh, P. K., Silicon Solar Cell Group, Gope, Jhuma, Vandana
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
ANNEALING
DENSITY
DEPOSITION
DEPOSITS
MATERIALS SCIENCE
PASSIVATION
SILICON
SURFACES
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Summary:The effect of deposition temperature (T{sub dep}) and subsequent annealing time (t{sub anl}) of atomic layer deposited aluminum oxide (Al{sub 2}O3) films on silicon surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, Q{sub F}. The interface defect density (D{sub it}) decreases with increase in T{sub dep} which further decreases with t{sub anl} up to 100s. An effective surface passivation (SRV
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4922267