Influence of the microstructure on the resulting 18R martensitic transformation of polycrystalline Cu Al Zn thin films obtained by sputtering and reactive annealing

We report the influence of the microstructure on the martensitic transformation in polycrystalline Cu[singlebond]Zn[singlebond]Al thin films with 18R structure. The films are grown in two steps. First, Cu[singlebond]Al thin films are obtained by DC sputtering. Second, the Zn is introduced in the Cu[...

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Bibliographic Details
Published in:Materials characterization 2016-04, Vol.114, p.289-295
Main Authors: Domenichini, P., Condó, A.M., Soldera, F., Sirena, M., Haberkorn, N.
Format: Article
Language:English
Subjects:
ANNEALING
Film thickness
GRAIN SIZE
Martensitic transformations
MATERIALS SCIENCE
Microstructure
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
PHASE TRANSFORMATIONS
POLYCRYSTALS
SHAPE MEMORY EFFECT
SPUTTERING
THIN FILMS
Transformations
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
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Summary:We report the influence of the microstructure on the martensitic transformation in polycrystalline Cu[singlebond]Zn[singlebond]Al thin films with 18R structure. The films are grown in two steps. First, Cu[singlebond]Al thin films are obtained by DC sputtering. Second, the Zn is introduced in the Cu[singlebond]Al thin films by the annealing them together with a bulk Cu[singlebond]Zn[singlebond]Al reference. The crystalline structure of the films was analyzed by X-ray diffraction and transmission electron microscopy. The martensitic transformation temperature was measured by electrical transport using conventional four probe geometry. It was observed that temperatures above 973K are necessary for zincification of the samples to occur. The resulting martensitic transformation and its hysteresis (barrier for the transformation) depend on the grain size, topology and films thickness.
ISSN:1044-5803
1873-4189
DOI:10.1016/j.matchar.2016.03.008