Spin transport in p-Ge through a vertically stacked Ge/Fe{sub 3}Si junction

We experimentally show spin transport up to 125 K in a ∼40-nm-thick p-Ge(111) layer, epitaxially grown on a ferromagnetic Fe{sub 3}Si. From the magnitude of the spin signals, the spin diffusion length of the p-Ge(111) layer at 10 K can be estimated to be approximately 50 nm. To understand the detect...

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Bibliographic Details
Published in:Applied physics letters 2016-07, Vol.109 (2)
Main Authors: Kawano, M., Santo, K., Ikawa, M., Yamada, S., Kanashima, T., Hamaya, K.
Format: Article
Language:English
Subjects:
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
DIFFUSION
DIFFUSION LENGTH
EPITAXY
HOLES
IRON SILICIDES
SEMICONDUCTOR JUNCTIONS
SIGNALS
SPIN
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Summary:We experimentally show spin transport up to 125 K in a ∼40-nm-thick p-Ge(111) layer, epitaxially grown on a ferromagnetic Fe{sub 3}Si. From the magnitude of the spin signals, the spin diffusion length of the p-Ge(111) layer at 10 K can be estimated to be approximately 50 nm. To understand the detectable spin transport in the p-Ge(111), we should consider the energy splitting between heavy-hole and light-hole bands at the L point.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4958894