Loading…

Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Spontaneously formed Al-As type interfaces of the InAs/AlSb system grown by molecular beam epitaxy for quantum cascade lasers were investigated by atomic resolution scanning transmission electron microscopy. Experimental strain profiles were compared to those coming from a model structure. High nega...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2016-05, Vol.108 (21)
Main Authors: Vallet, M., Claveau, Y., Warot-Fonrose, B., Gatel, C., Nicolai, J., Combe, N., Magen, C., Teissier, R., Baranov, A. N., Ponchet, A.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Spontaneously formed Al-As type interfaces of the InAs/AlSb system grown by molecular beam epitaxy for quantum cascade lasers were investigated by atomic resolution scanning transmission electron microscopy. Experimental strain profiles were compared to those coming from a model structure. High negative out-of-plane strains with the same order of magnitude as perfect Al-As interfaces were observed. The effects of the geometrical phase analysis used for strain determination were evidenced and discussed in the case of abrupt and huge variations of both atomic composition and bond length as observed in these interfaces. Intensity profiles performed on the same images confirmed that changes of chemical composition are the source of high strain fields at interfaces. The results show that spontaneously assembled interfaces are not perfect but extend over 2 or 3 monolayers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4952951