Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

We report substantial improvement of near-infrared (2–2.6 μm) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 °C,...

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Bibliographic Details
Published in:Applied physics letters 2016-03, Vol.108 (12)
Main Authors: Shirazi-HD, M., Birck Nanotechnology Center, West Lafayette, Indiana 47907, Turkmeneli, K., Dai, S., Edmunds, C., Malis, O., Liu, S., Shao, J., Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, Gardner, G., School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, Zakharov, D. N., Manfra, M. J.
Format: Article
Language:English
Subjects:
ABSORPTION
ALUMINIUM NITRIDES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
CRYSTALS
DESIGN
GALLIUM NITRIDES
INTERFACES
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
OPTIMIZATION
ROUGHNESS
SHEETS
SUBSTRATES
SUPERLATTICES
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Summary:We report substantial improvement of near-infrared (2–2.6 μm) intersubband absorption in c-plane AlInN/GaN superlattices grown by molecular beam epitaxy. Progress was obtained through optimization of AlInN growth conditions using an AlInN growth rate of 0.9-nm/min at substrate temperature of 550 °C, as well as by judiciously placing the charge into two delta-doping sheets. Structural characterization suggests that AlInN crystal quality is enhanced and interface roughness is reduced. Importantly, near-infrared absorption data indicate that the optical quality of the AlInN/GaN superlattices is now comparable with that of AlN/GaN superlattices designed to exploit near-infrared intersubband transitions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4944847