A divalent rare earth oxide semiconductor: Yttrium monoxide

Rare earth oxides are usually widegap insulators like Y2O3 with closed shell trivalent rare earth ions. In this study, solid phase rock salt structure yttrium monoxide, YO, with unusual valence of Y2+ (4d 1) was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO has b...

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Bibliographic Details
Published in:Applied physics letters 2016-03, Vol.108 (12)
Main Authors: Kaminaga, Kenichi, Sei, Ryosuke, Hayashi, Kouichi, Happo, Naohisa, Tajiri, Hiroo, Oka, Daichi, Fukumura, Tomoteru, Hasegawa, Tetsuya
Format: Article
Language:English
Subjects:
Applied physics
BINDING ENERGY
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COLOR
Electrical resistivity
ENERGY BEAM DEPOSITION
EPITAXY
Halites
Insulators
L-S COUPLING
LASER RADIATION
MAGNETORESISTANCE
Magnetoresistivity
Metal ions
OXYGEN
PULSED IRRADIATION
Pulsed laser deposition
Pulsed lasers
PULSES
Rare earth compounds
Rare earth oxides
RARE EARTHS
SEMICONDUCTOR MATERIALS
Solid phases
Spin-orbit interactions
THIN FILMS
Trace elements
VACANCIES
VALENCE
Yttrium oxide
YTTRIUM OXIDES
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Summary:Rare earth oxides are usually widegap insulators like Y2O3 with closed shell trivalent rare earth ions. In this study, solid phase rock salt structure yttrium monoxide, YO, with unusual valence of Y2+ (4d 1) was synthesized in a form of epitaxial thin film by pulsed laser deposition method. YO has been recognized as gaseous phase in previous studies. In contrast with Y2O3, YO was dark-brown colored and narrow gap semiconductor. The tunable electrical conductivity ranging from 10−1 to 103 Ω−1 cm−1 was attributed to the presence of oxygen vacancies serving as electron donor. Weak antilocalization behavior observed in magnetoresistance indicated significant role of spin-orbit coupling as a manifestation of 4d electron carrier.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4944330