Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fract...

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Bibliographic Details
Published in:Applied physics letters 2016-04, Vol.108 (15)
Main Authors: Martens, M., Kuhn, C., Ziffer, E., Simoneit, T., Kueller, V., Knauer, A., Rass, J., Wernicke, T., Einfeldt, S., Weyers, M., Kneissl, M.
Format: Article
Language:English
Subjects:
ABSORPTION
ALUMINIUM
Aluminum
Applied physics
CLADDING
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CURRENT DENSITY
Current injection
Diodes
ELECTRIC POTENTIAL
Emission analysis
Heterostructures
Laser beam cladding
LASERS
LAYERS
LOSSES
OPTICAL MODES
QUANTUM WELLS
Semiconductor lasers
SUPERLATTICES
Ultraviolet emission
Ultraviolet lasers
ULTRAVIOLET RADIATION
WAVEGUIDES
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Summary:Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al0.70Ga0.30N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4947102