A high performance transparent resistive switching memory made from ZrO{sub 2}/AlON bilayer structure

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{s...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2016-04, Vol.108 (15)
Main Authors: Tsai, Tsung-Ling, Chang, Hsiang-Yu, Tseng, Tseung-Yuen, Lou, Jesse Jen-Chung
Format: Article
Language:English
Subjects:
ALUMINIUM
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELECTRODES
FILAMENTS
INTERFACES
LAYERS
MIGRATION
RUPTURES
TIN OXIDES
ZIRCONIUM
ZIRCONIUM OXIDES
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO{sub 2})/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO{sub 2}/ITO single layer device, the ITO/ZrO{sub 2}/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO{sub 2}/AlON interface. Therefore, in the ITO/ZrO{sub 2}/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4946006