Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state

We report on a defect related luminescence band at 2.4 eV in aluminum nitride bulk crystals, for which we find strong indications to be related to silicon DX centers. Time resolved photoluminescence spectroscopy using a sub-bandgap excitation reveals two different recombination processes with very l...

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Bibliographic Details
Published in:Journal of applied physics 2016-04, Vol.119 (15)
Main Authors: Lamprecht, M., Grund, C., Neuschl, B., Thonke, K., Bryan, Z., Collazo, R., Sitar, Z.
Format: Article
Language:English
Subjects:
ALUMINIUM
ALUMINIUM NITRIDES
Aluminum
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
DECAY
Decay rate
DEFECTS
DISSOCIATION
DISSOCIATION ENERGY
DX centres
Electron paramagnetic resonance
ELECTRON SPIN RESONANCE
ELECTRONS
Energy of dissociation
EXCITATION
Free energy
Heat of formation
MEV RANGE 10-100
PARAMAGNETISM
PHOTOLUMINESCENCE
QUENCHING
RECOMBINATION
SILICON
SPECTROSCOPY
Temperature dependence
TEMPERATURE RANGE 0065-0273 K
Thermal dissociation
TIME RESOLUTION
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Description
Summary:We report on a defect related luminescence band at 2.4 eV in aluminum nitride bulk crystals, for which we find strong indications to be related to silicon DX centers. Time resolved photoluminescence spectroscopy using a sub-bandgap excitation reveals two different recombination processes with very long decay times of 13 ms and 153 ms at low temperature. Based on the results of temperature and excitation dependent photoluminescence experiments, the process with the shorter lifetime is assigned to a donor-acceptor pair transition involving the shallow silicon donor state, which can be emptied with a thermal dissociation energy of 65 meV. The slower process with a thermal quenching energy of 15 meV is assigned to the slightly deeper Si DX state known from electron paramagnetic resonance experiments, which is transferred back to the shallow donor state.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4946828