Temperature and doping dependent changes in surface recombination during UV illumination of (Al)GaN bulk layers

We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semicondu...

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Bibliographic Details
Published in:Journal of applied physics 2016-09, Vol.120 (9)
Main Authors: Netzel, Carsten, Jeschke, Jörg, Brunner, Frank, Knauer, Arne, Weyers, Markus
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dislocation density
DISLOCATIONS
Doping
Emission
Energy gap
Epitaxial growth
EPITAXY
EXCITATION
GALLIUM NITRIDES
ILLUMINANCE
Illumination
Incident light
LAYERS
Light
Luminous intensity
PHOTOLUMINESCENCE
POWER DENSITY
Pretreatment
RECOMBINATION
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
Threading dislocations
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Summary:We have studied the effect of continuous illumination with above band gap energy on the emission intensity of polar (Al)GaN bulk layers during the photoluminescence experiments. A temporal change in emission intensity on time scales from seconds to hours is based on the modification of the semiconductor surface states and the surface recombination by the incident light. The temporal behavior of the photoluminescence intensity varies with the parameters such as ambient atmosphere, pretreatment of the surface, doping density, threading dislocation density, excitation power density, and sample temperature. By means of temperature-dependent photoluminescence measurements, we observed that at least two different processes at the semiconductor surface affect the non-radiative surface recombination during illumination. The first process leads to an irreversible decrease in photoluminescence intensity and is dominant around room temperature, and the second process leads to a delayed increase in intensity and becomes dominant around T = 150–200 K. Both processes become slower when the sample temperature decreases from room temperature. They cease for T 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4962319