Transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/Al-ZnO p-n heterojunction diode

A p-type Organic inorganic tin chloride (CH{sub 3}NH{sub 3}SnCl{sub 3}) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH{sub 3}NH{sub 3}S...

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Bibliographic Details
Published in:AIP conference proceedings 2016-05, Vol.1731 (1)
Main Authors: Kumar, Sunil, Ansari, Mohd Zubair, Khare, Neeraj
Format: Article
Language:English
Subjects:
ALUMINIUM ADDITIONS
CHEMICAL VAPOR DEPOSITION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFUSION BARRIERS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
HETEROJUNCTIONS
OPACITY
PEROVSKITE
SOLID SOLUTIONS
SPIN
SPIN-ON COATING
SUBSTRATES
THIN FILMS
TIN CHLORIDES
TIN COMPOUNDS
ZINC OXIDES
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Summary:A p-type Organic inorganic tin chloride (CH{sub 3}NH{sub 3}SnCl{sub 3}) perovskite thin film has been synthesized by solution method. An n-type 1% Al doped ZnO (AZO) film has been deposited on FTO substrate by ultrasonic assisted chemical vapor deposition technique. A transparent CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction diode has been fabricated by spin coating technique. CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows 75% transparency in the visible region. I-V characteristic of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction shows rectifying behavior of the diode. The diode parameters calculated as ideality factor η=2.754 and barrier height Φ= 0.76 eV. The result demonstrates the potentiality of CH{sub 3}NH{sub 3}SnCl{sub 3}/AZO p-n heterojunction for transparent electronics.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.4948097