Anomalous hall effect in a diluted p-InAs〈Mn〉 magnetic semiconductor

The dependences of the electrical resistivity and the Hall coefficient of single-crystal p -InAs〈Mn〉 bulk samples with an acceptor concentration of about 10 18 cm –3 on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effe...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2017-03, Vol.124 (3), p.493-495
Main Authors: Arslanov, R. K., Arslanov, T. R., Daunov, M. I.
Format: Article
Language:English
Subjects:
Classical and Quantum Gravitation
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
Electronic Properties of Solid
Elementary Particles
HALL EFFECT
IMPURITIES
INDIUM ARSENIDES
MAGNETIC SEMICONDUCTORS
MAGNETIC SUSCEPTIBILITY
MANGANESE ADDITIONS
MONOCRYSTALS
P-TYPE CONDUCTORS
Particle and Nuclear Physics
Physics
Physics and Astronomy
PRESSURE RANGE GIGA PA
Quantum Field Theory
Relativity Theory
Solid State Physics
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Summary:The dependences of the electrical resistivity and the Hall coefficient of single-crystal p -InAs〈Mn〉 bulk samples with an acceptor concentration of about 10 18 cm –3 on uniform pressure P = 4–6 GPa at T = 300 K in the region of impurity conduction are quantitatively analyzed. The anomalous Hall effect is shown to occur in p -InAs〈Mn〉. Its contribution is negative and correlates with the deionization of acceptors and an increase in the magnetic susceptibility.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776117020017