Effective Hamiltonian of silicene in the presence of electric and magnetic fields

An effective Hamiltonian of silicene in the neighborhood of Dirac points in the presence of electric and magnetic fields perpendicular to the plane of the film is constructed on the basis of symmetry analysis. Numerical coefficients of various terms in the Hamiltonian are obtained by the tight bindi...

Full description

Saved in:
Bibliographic Details
Published in:Journal of experimental and theoretical physics 2016-11, Vol.123 (5), p.851-858
Main Authors: Gert, A. V., Nestoklon, M. O., Yassievich, I. N.
Format: Article
Language:English
Subjects:
CHARGE CARRIERS
Charge transport
Classical and Quantum Gravitation
Current carriers
Displacement
Electron spin
Electron transport
Electronic Properties of Solid
ELECTRONS
Elementary Particles
First principles
HAMILTONIANS
INTERACTIONS
MAGNETIC FIELDS
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
Particle and Nuclear Physics
Physics
Physics and Astronomy
Quantum Field Theory
Quantum theory
Relativity Theory
SILICENE
Solid State Physics
SPIN
SYMMETRY
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An effective Hamiltonian of silicene in the neighborhood of Dirac points in the presence of electric and magnetic fields perpendicular to the plane of the film is constructed on the basis of symmetry analysis. Numerical coefficients of various terms in the Hamiltonian are obtained by the tight binding method in the basis sp 3 d 5 s * with regard to the interaction with one nearest neighbor. This method was developed in the previous paper [1] in the case of a sublattice displacement of 0.44 Å, which corresponds to the theoretical value of displacement obtained from first principles for a free film of silicene. The effect of the displacement of sublattices on the orientation of spin and pseudospin in silicene is analyzed. The Hamiltonian obtained allows one to consider spin and electron transport for charge carriers with energy less than 0.5 eV. The orbital motion of electrons in an external magnetic field perpendicular to the film is analyzed in detail.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776116100046