The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups

The spatial arrangement of single linear defects in a Si single crystal (input surface {111}) has been investigated by X-ray topo-tomography using laboratory X-ray sources. The experimental technique and the procedure of reconstructing a 3D image of dislocation half-loops near the Si crystal surface...

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Bibliographic Details
Published in:Crystallography reports 2017-01, Vol.62 (1), p.20-24
Main Authors: Zolotov, D. A., Buzmakov, A. V., Elfimov, D. A., Asadchikov, V. E., Chukhovskii, F. N.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Crystallography and Scattering Methods
Diffraction and Scattering of Ionizing Radiations
DISLOCATIONS
MONOCRYSTALS
Physics
Physics and Astronomy
SILICON
SPATIAL RESOLUTION
TOMOGRAPHY
TRIOCTYLPHOSPHINE OXIDE
X RADIATION
X-RAY SOURCES
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Summary:The spatial arrangement of single linear defects in a Si single crystal (input surface {111}) has been investigated by X-ray topo-tomography using laboratory X-ray sources. The experimental technique and the procedure of reconstructing a 3D image of dislocation half-loops near the Si crystal surface are described. The sizes of observed linear defects with a spatial resolution of about 10 μm are estimated.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774517010266