On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2016-12, Vol.50 (12), p.1604-1608
• Main Authors: Yablonsky, A. N., Zhukavin, R. Kh, Bekin, N. A., Novikov, A. V., Yurasov, D. V., Shaleev, M. V.
• Format: Article
• Language: English
• Subjects: 2016; CHARGE CARRIERS; CRYSTAL STRUCTURE; Current carriers; DIFFUSION BARRIERS; EPITAXY; EXCITONS; Germanium; GERMANIUM SILICIDES; HETEROJUNCTIONS; Heterostructures; HOLES; LAYERS; Magnetic Materials; Magnetism; March 14–18; MATERIALS SCIENCE; Nizhny Novgorod; PHOTOLUMINESCENCE; Physics; Physics and Astronomy; QUANTUM WELLS; Radiative recombination; RECOMBINATION; SILICON; Silicon compounds; Silicon germanides; Thickness; TUNNEL EFFECT; XX International Symposium “Nanophysics and Nanoelectronics”
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782616120277

For SiGe/Si(001) epitaxial structures with two nonequivalent SiGe quantum wells separated by a thin Si barrier, the spectral and time characteristics of interband photoluminescence corresponding to the radiative recombination of excitons in quantum wells are studied. For a series of structures with two SiGe quantum wells different in width, the characteristic time of tunneling of charge carriers (holes) from the narrow quantum well, distinguished by a higher exciton recombination energy, to the wide quantum well is determined as a function of the Si barrier thickness. It is shown that the time of tunneling of holes between the Si 0.8 5Ge 0.15 layers with thicknesses of 3 and 9 nm steadily decreases from ~500 to