On the local injection of emitted electrons into micrograins on the surface of A{sup III}–B{sup V} semiconductors

The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-06, Vol.50 (6)
Main Authors: Zhukov, N. D., Glukhovskoi, E. G., Khazanov, A. A.
Format: Article
Language:English
Subjects:
COMPARATIVE EVALUATIONS
COULOMB FIELD
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRONS
FIELD EMISSION
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
SURFACE AREA
SURFACES
TUNNEL EFFECT
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Summary:The characteristics of the injection of electrons into a semiconductor from a microprobe–micrograin nanogap are investigated with a tunneling microscope in the mode of field emission into locally selected surface microcrystals of indium antimonide, indium arsenide, and gallium arsenide. The current mechanisms are established and their parameters are determined by comparing the experimental I–V characteristics and those calculated from formulas of current transport. The effect of limitation of the current into the micrograins of indium antimonide and indium arsenide which manifests itself at injection levels exceeding a certain critical value, e.g., 6 × 10{sup 16} cm{sup –3} for indium antimonide and 4 × 10{sup 17} cm{sup –3} for indium arsenide, is discovered. A physical model, i.e., the localization of electrons in the surface area of a micrograin due to their Coulomb interaction, is proposed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616060257