Accumulated distribution of material gain at dislocation crystal growth

A model for slowing down the tangential growth rate of an elementary step at dislocation crystal growth is proposed based on the exponential law of impurity particle distribution over adsorption energy. It is established that the statistical distribution of material gain on structurally equivalent f...

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Bibliographic Details
Published in:Crystallography reports 2016-05, Vol.61 (3), p.517-522
Main Author: Rakin, V. I.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALLOGRAPHY
Crystallography and Scattering Methods
DISLOCATIONS
IMPURITIES
Physics
Physics and Astronomy
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Summary:A model for slowing down the tangential growth rate of an elementary step at dislocation crystal growth is proposed based on the exponential law of impurity particle distribution over adsorption energy. It is established that the statistical distribution of material gain on structurally equivalent faces obeys the Erlang law. The Erlang distribution is proposed to be used to calculate the occurrence rates of morphological combinatorial types of polyhedra, presenting real simple crystallographic forms.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774516020152