Atomic steps on an ultraflat Si(111) surface upon sublimation

The kinetics of atomic steps on an ultraflat Si(111) surface is studied by in situ ultrahigh-vacuum reflection electron microscopy at temperatures of 1050–1350°C. For the first time it is experimentally shown that the rate of displacement of an atomic step during sublimation nonlinearly depends on t...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-05, Vol.50 (5), p.596-600
Main Authors: Sitnikov, S. V., Latyshev, A. V., Kosolobov, S. S.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
DIFFUSION
DISSOLUTION
ELECTRON MICROSCOPY
Interfaces
Magnetic Materials
Magnetism
MATERIALS SCIENCE
NUCLEATION
Physics
Physics and Astronomy
PRESSURE RANGE BELOW 1 NANO PA
REFLECTION
SILICON
SUBLIMATION
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
Thin Films
VACANCIES
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Summary:The kinetics of atomic steps on an ultraflat Si(111) surface is studied by in situ ultrahigh-vacuum reflection electron microscopy at temperatures of 1050–1350°C. For the first time it is experimentally shown that the rate of displacement of an atomic step during sublimation nonlinearly depends on the width of the adjacent terrace. It is established that the atomic mechanism of mass-transport processes at the surface at temperatures higher than 1200°C is controlled by nucleation and the diffusion of surface vacancies rather than of adsorbed Si atoms. The studies make it possible to estimate the activation energy of the dissolution of vacancies from the surface into the bulk of Si. The estimated activation energy is (4.3 ± 0.05) eV.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616050201