Influence of the Surface Layer on the Electrochemical Deposition of Metals and Semiconductors into Mesoporous Silicon

The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-03, Vol.50 (3), p.372-376
Main Authors: Chubenko, E. B., Redko, S. V., Sherstnyov, A. I., Petrovich, V. A., Kotov, D. A., Bondarenko, V. P.
Format: Article
Language:English
Subjects:
ASPECT RATIO
Chemical properties
Composite Semiconductors
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
Electric properties
ELECTROCHEMISTRY
ELECTRODEPOSITION
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Microcrystalline
NANOCOMPOSITES
Nanocrystalline
NANOSCIENCE AND NANOTECHNOLOGY
NANOSTRUCTURES
NICKEL OXIDES
Physics
Physics and Astronomy
Porous
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
Semiconductors
SILICON
SURFACES
Zinc oxide
ZINC OXIDES
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Summary:The influence of the surface layer on the process of the electrochemical deposition of metals and semiconductors into porous silicon is studied. It is shown that the surface layer differs in structure and electrical characteristics from the host porous silicon bulk. It is established that a decrease in the conductivity of silicon crystallites that form the surface layer of porous silicon has a positive effect on the process of the filling of porous silicon with metals and semiconductors. This is demonstrated by the example of nickel and zinc oxide. The effect can be used for the formation of nanocomposite materials on the basis of porous silicon and nanostructures with a high aspect ratio.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616030040