Effect of gamma irradiation on the photoluminescence of porous silicon

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of phot...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-04, Vol.51 (4), p.483-487
Main Authors: Elistratova, M. A., Romanov, N. M., Goryachev, D. N., Zakharova, I. B., Sreseli, O. M.
Format: Article
Language:English
Subjects:
Composite Semiconductors
ELECTROCHEMISTRY
EMISSION SPECTRA
Food irradiation
FULLERENES
Gamma irradiation
GAMMA RADIATION
HYDROGEN
Ionizing radiation
IRRADIATION
LAYERS
Luminescence
Magnetic Materials
Magnetism
MATERIALS RECOVERY
MATERIALS SCIENCE
Microcrystalline
Nanocrystalline
Optical properties
OXIDATION
PASSIVATION
Passivity
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
Physics
Physics and Astronomy
Porous
POROUS MATERIALS
Porous silicon
RADIATION DOSES
SILICON
Spectra
SURFACES
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Summary:The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C 60 layer are stable to gamma irradiation and oxidation.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782617040029