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Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface

The atomic and electronic structure of four variants of Te-terminated CdTe(111) B –(2√3 × 4) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The surface is modeled by a film composed of 12 atomic laye...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2017-01, Vol.51 (1), p.23-33
Main Authors: Bekenev, V. L., Zubkova, S. M.
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cited_by cdi_FETCH-LOGICAL-c344t-f1b023c1f22cd13123629154c9c01d71a0946e6f8eb188c1efaf5b73a5aa8adf3
cites cdi_FETCH-LOGICAL-c344t-f1b023c1f22cd13123629154c9c01d71a0946e6f8eb188c1efaf5b73a5aa8adf3
container_end_page 33
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container_title Semiconductors (Woodbury, N.Y.)
container_volume 51
creator Bekenev, V. L.
Zubkova, S. M.
description The atomic and electronic structure of four variants of Te-terminated CdTe(111) B –(2√3 × 4) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The surface is modeled by a film composed of 12 atomic layers with a vacuum gap of ~16 Å in the layered superlattice approximation. To close Cd dangling bonds on the opposite side of the film, 24 fictitious hydrogen atoms with a charge of 1.5 electrons each are added. Ab initio calculations are performed using the Quantum Espresso program based on density functional theory. It is demonstrated that relaxation leads to splitting of the four upper layers. The band energy structures and total and layer-by-layer densities of electronic states for the four surface variants are calculated and analyzed.
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fullrecord <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22649632</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1880776673</sourcerecordid><originalsourceid>FETCH-LOGICAL-c344t-f1b023c1f22cd13123629154c9c01d71a0946e6f8eb188c1efaf5b73a5aa8adf3</originalsourceid><addsrcrecordid>eNp1kM9KAzEQxhdRsFYfwFvAS3tYzSTZZPdYi_-g4KEVvIU0m7Rb2k1NsgdvHr17EHwd36RP4pYKCuJpZpjf9zHzJckp4HMAyi7GgDkVOeEgMGBMHveSDuACp5yJYn_bc5pu94fJUQgLjAHyjHWS8SC6VaWRqktklkZH7-p2DNE3OjbeIGdRnBs0LCemBwD9y83LW49sXj8o-nxHrI-cj3M3c7VaotB4q7Q5Tg6sWgZz8l27ycP11WR4m47ub-6Gg1GqKWMxtTDFhGqwhOgSKBDKSQEZ04XGUApQuGDccJubKeS5BmOVzaaCqkypXJWWdpOzna8LsZJBV9HouXZ13b4hCeGs4JT8UGvvnhoToly4xrfnBtnaYiE4F7SlYEdp70Lwxsq1r1bKP0vAcpuw_JNwqyE7TWjZemb8L-d_RV9hm3yH</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1880776673</pqid></control><display><type>article</type><title>Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface</title><source>Springer Link</source><creator>Bekenev, V. L. ; Zubkova, S. M.</creator><creatorcontrib>Bekenev, V. L. ; Zubkova, S. M.</creatorcontrib><description>The atomic and electronic structure of four variants of Te-terminated CdTe(111) B –(2√3 × 4) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The surface is modeled by a film composed of 12 atomic layers with a vacuum gap of ~16 Å in the layered superlattice approximation. To close Cd dangling bonds on the opposite side of the film, 24 fictitious hydrogen atoms with a charge of 1.5 electrons each are added. Ab initio calculations are performed using the Quantum Espresso program based on density functional theory. It is demonstrated that relaxation leads to splitting of the four upper layers. The band energy structures and total and layer-by-layer densities of electronic states for the four surface variants are calculated and analyzed.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S106378261701002X</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Atomic structure ; ATOMS ; CADMIUM TELLURIDES ; CHEMICAL BONDS ; DENSITY FUNCTIONAL METHOD ; Density functional theory ; Electron states ; ELECTRONIC STRUCTURE ; ELECTRONS ; HYDROGEN ; Hydrogen atoms ; Interfaces ; LAYERS ; Magnetic Materials ; Magnetism ; MATERIALS SCIENCE ; Physics ; Physics and Astronomy ; RELAXATION ; SUPERLATTICES ; SURFACES ; THIN FILMS</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2017-01, Vol.51 (1), p.23-33</ispartof><rights>Pleiades Publishing, Ltd. 2017</rights><rights>Copyright Springer Science &amp; Business Media 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c344t-f1b023c1f22cd13123629154c9c01d71a0946e6f8eb188c1efaf5b73a5aa8adf3</citedby><cites>FETCH-LOGICAL-c344t-f1b023c1f22cd13123629154c9c01d71a0946e6f8eb188c1efaf5b73a5aa8adf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22649632$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bekenev, V. L.</creatorcontrib><creatorcontrib>Zubkova, S. M.</creatorcontrib><title>Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The atomic and electronic structure of four variants of Te-terminated CdTe(111) B –(2√3 × 4) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The surface is modeled by a film composed of 12 atomic layers with a vacuum gap of ~16 Å in the layered superlattice approximation. To close Cd dangling bonds on the opposite side of the film, 24 fictitious hydrogen atoms with a charge of 1.5 electrons each are added. Ab initio calculations are performed using the Quantum Espresso program based on density functional theory. It is demonstrated that relaxation leads to splitting of the four upper layers. The band energy structures and total and layer-by-layer densities of electronic states for the four surface variants are calculated and analyzed.</description><subject>Atomic structure</subject><subject>ATOMS</subject><subject>CADMIUM TELLURIDES</subject><subject>CHEMICAL BONDS</subject><subject>DENSITY FUNCTIONAL METHOD</subject><subject>Density functional theory</subject><subject>Electron states</subject><subject>ELECTRONIC STRUCTURE</subject><subject>ELECTRONS</subject><subject>HYDROGEN</subject><subject>Hydrogen atoms</subject><subject>Interfaces</subject><subject>LAYERS</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>MATERIALS SCIENCE</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>RELAXATION</subject><subject>SUPERLATTICES</subject><subject>SURFACES</subject><subject>THIN FILMS</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kM9KAzEQxhdRsFYfwFvAS3tYzSTZZPdYi_-g4KEVvIU0m7Rb2k1NsgdvHr17EHwd36RP4pYKCuJpZpjf9zHzJckp4HMAyi7GgDkVOeEgMGBMHveSDuACp5yJYn_bc5pu94fJUQgLjAHyjHWS8SC6VaWRqktklkZH7-p2DNE3OjbeIGdRnBs0LCemBwD9y83LW49sXj8o-nxHrI-cj3M3c7VaotB4q7Q5Tg6sWgZz8l27ycP11WR4m47ub-6Gg1GqKWMxtTDFhGqwhOgSKBDKSQEZ04XGUApQuGDccJubKeS5BmOVzaaCqkypXJWWdpOzna8LsZJBV9HouXZ13b4hCeGs4JT8UGvvnhoToly4xrfnBtnaYiE4F7SlYEdp70Lwxsq1r1bKP0vAcpuw_JNwqyE7TWjZemb8L-d_RV9hm3yH</recordid><startdate>20170101</startdate><enddate>20170101</enddate><creator>Bekenev, V. L.</creator><creator>Zubkova, S. M.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>20170101</creationdate><title>Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface</title><author>Bekenev, V. L. ; Zubkova, S. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c344t-f1b023c1f22cd13123629154c9c01d71a0946e6f8eb188c1efaf5b73a5aa8adf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Atomic structure</topic><topic>ATOMS</topic><topic>CADMIUM TELLURIDES</topic><topic>CHEMICAL BONDS</topic><topic>DENSITY FUNCTIONAL METHOD</topic><topic>Density functional theory</topic><topic>Electron states</topic><topic>ELECTRONIC STRUCTURE</topic><topic>ELECTRONS</topic><topic>HYDROGEN</topic><topic>Hydrogen atoms</topic><topic>Interfaces</topic><topic>LAYERS</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>MATERIALS SCIENCE</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>RELAXATION</topic><topic>SUPERLATTICES</topic><topic>SURFACES</topic><topic>THIN FILMS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bekenev, V. L.</creatorcontrib><creatorcontrib>Zubkova, S. M.</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bekenev, V. L.</au><au>Zubkova, S. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2017-01-01</date><risdate>2017</risdate><volume>51</volume><issue>1</issue><spage>23</spage><epage>33</epage><pages>23-33</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The atomic and electronic structure of four variants of Te-terminated CdTe(111) B –(2√3 × 4) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The surface is modeled by a film composed of 12 atomic layers with a vacuum gap of ~16 Å in the layered superlattice approximation. To close Cd dangling bonds on the opposite side of the film, 24 fictitious hydrogen atoms with a charge of 1.5 electrons each are added. Ab initio calculations are performed using the Quantum Espresso program based on density functional theory. It is demonstrated that relaxation leads to splitting of the four upper layers. The band energy structures and total and layer-by-layer densities of electronic states for the four surface variants are calculated and analyzed.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S106378261701002X</doi><tpages>11</tpages></addata></record>
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subjects Atomic structure
ATOMS
CADMIUM TELLURIDES
CHEMICAL BONDS
DENSITY FUNCTIONAL METHOD
Density functional theory
Electron states
ELECTRONIC STRUCTURE
ELECTRONS
HYDROGEN
Hydrogen atoms
Interfaces
LAYERS
Magnetic Materials
Magnetism
MATERIALS SCIENCE
Physics
Physics and Astronomy
RELAXATION
SUPERLATTICES
SURFACES
THIN FILMS
title Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T15%3A22%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Atomic%20and%20electronic%20structure%20of%20the%20CdTe(111)B%E2%80%93(2%E2%88%9A3%20%C3%97%204)%20orthogonal%20surface&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Bekenev,%20V.%20L.&rft.date=2017-01-01&rft.volume=51&rft.issue=1&rft.spage=23&rft.epage=33&rft.pages=23-33&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S106378261701002X&rft_dat=%3Cproquest_osti_%3E1880776673%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c344t-f1b023c1f22cd13123629154c9c01d71a0946e6f8eb188c1efaf5b73a5aa8adf3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1880776673&rft_id=info:pmid/&rfr_iscdi=true