Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

As a result of theoretical and experimental analyses, the parameters of heterostructures with InAs quantum dots in a GaAs matrix are determined, which provide the development of high-speed and efficient plasmon-polariton near-infrared light-emitting Schottky diodes based on such structures. The quan...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-11, Vol.50 (11), p.1554-1560
Main Authors: Baidus, N. V., Kukushkin, V. A., Zvonkov, B. N., Nekorkin, S. M.
Format: Article
Language:English
Subjects:
2016
Analysis
Buffer layers
CONCENTRATION RATIO
DOPED MATERIALS
Gallium arsenide
GALLIUM ARSENIDES
GOLD
HETEROJUNCTIONS
Heterostructures
High speed
INDIUM ARSENIDES
Infrared analysis
INTERFACES
LAYERS
Light
Magnetic Materials
Magnetism
March 14–18
MATERIALS SCIENCE
MATRIX MATERIALS
Near infrared radiation
Nizhny Novgorod
Parameters
PHOTONS
Physics
Physics and Astronomy
PLASMONS
Polaritons
POLARONS
QUANTUM DOTS
SCHOTTKY BARRIER DIODES
Schottky diodes
SURFACES
VISIBLE RADIATION
XX International Symposium “Nanophysics and Nanoelectronics”
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Summary:As a result of theoretical and experimental analyses, the parameters of heterostructures with InAs quantum dots in a GaAs matrix are determined, which provide the development of high-speed and efficient plasmon-polariton near-infrared light-emitting Schottky diodes based on such structures. The quantum dots should be arranged on a heavily doped (to a dopant concentration of 10 19 cm –3 ) GaAs buffer layer and be separated from the metal by a thin (10–30 nm thick) undoped GaAs cap layer. The interface between the metal (e.g., gold) and GaAs provides the efficient scattering of surface plasmon-polaritons to ordinary photons if it contains inhomogeneities shaped as metal-filled cavities with a characteristic size of ~30 nm and a surface concentration above 10 10 cm –2 .
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616110026